Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BUK6Y10-30PX, BUK6Y10-30P/SOT669/LFPAK
Semiconductors\Discrete Semiconductors30V 80A 110W 10mΩ@13.5A,10V 3V@250uA P Channel LFPAK-56 MOSFETs ROHS
| Continuous Drain Current (Id) | 80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@13.5A, 10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 2.36nF@15V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 110W |
| Total Gate Charge (Qg@Vgs) | 64nC@10V |
| Type | P Channel |
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1500 |
| Fall Time | 580 ns |
| Forward Transconductance - Min | 31 S |
| Id - Continuous Drain Current | 80 A |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | LFPAK-56-4 |
| Part # Aliases | 934661707115 |
| Pd - Power Dissipation | 110 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 42.5 nC |
| Rds On - Drain-Source Resistance | 10 mOhms |
| Rise Time | 38 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 80 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
Похожие товары
Цена по запросу
Цена по запросу
Цена по запросу
Цена по запросу
