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Цена по запросу

BUK6Y19-30PX, BUK6Y19-30P/SOT669/LFPAK

Semiconductors\Discrete SemiconductorsLFPAK P-Channel Trench MOSFETs Nexperia LFPAK P-Channel Trench MOSFETs are designed and qualified to AEC-Q101 standards for use in high-performance automotive applications. These MOSFETs feature high thermal power dissipation capability. The P-channel MOSFETs are available in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package. These MOSFETs are suitable for thermally demanding environments due to the 175°C rating. Typical applications include reverse battery protection, power management, high-side load switch, and motor drive.

Brand	Nexperia
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	1500
Fall Time	237 ns
Forward Transconductance - Min	14 S
Id - Continuous Drain Current	45 A
Manufacturer	Nexperia
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	LFPAK-56-4
Part # Aliases	934661579115
Pd - Power Dissipation	66 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	23 nC
Qualification	AEC-Q100
Rds On - Drain-Source Resistance	19 mOhms
Rise Time	83 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	15 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	3 V