Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BUK7M11-40HX, BUK7M11-40H/ SOT1210/mLFPAK
Semiconductors\Discrete Semiconductors40V 35A 9.3mΩ@10V,10A 50W 3V@1mA N Channel SOT1210 MOSFETs ROHS
| Continuous Drain Current (Id) | 35A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9.3mΩ@10V, 10A |
| Drain Source Voltage (Vdss) | 40V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
| Input Capacitance (Ciss@Vds) | 730pF@25V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF@25V |
| Total Gate Charge (Qg@Vgs) | 11.2nC@10V |
| Type | N Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A(Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1022 pF @ 25 V |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1210, 8-LFPAK33(5-Lead) |
| Power Dissipation (Max) | 50W(Tc) |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 10A, 10V |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | +20V, -10V |
| Vgs(th) (Max) @ Id | 3.6V @ 1mA |
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