Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
BUK7M20-40HX
Semiconductors\Discrete Semiconductors40V 25A 16.3mΩ@10V,10A 38W 3V@1mA N Channel SOT1210 MOSFETs ROHS
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 16.3mΩ@10V, 10A |
Drain Source Voltage (Vdss) | 40V |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
Input Capacitance (Ciss@Vds) | 427pF@25V |
Operating Temperature | -55℃~+175℃@(Tj) |
Power Dissipation (Pd) | 38W |
Reverse Transfer Capacitance (Crss@Vds) | 22pF@25V |
Total Gate Charge (Qg@Vgs) | 7.3nC@10V |
Type | N Channel |
Current - Continuous Drain (Id) @ 25°C | 25A(Tc) |
Drain to Source Voltage (Vdss) | 40 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
Grade | Automotive |
Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 25 V |
Mounting Type | Surface Mount |
Package / Case | SOT-1210, 8-LFPAK33(5-Lead) |
Power Dissipation (Max) | 38W(Tc) |
Qualification | AEC-Q101 |
Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
Supplier Device Package | LFPAK33 |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | +20V, -10V |
Vgs(th) (Max) @ Id | 3.6V @ 1mA |