Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
BUK7M5R0-40HX, MOSFET BUK7M5R0-40H/ SOT1210/mLFPAK
Semiconductors\Discrete SemiconductorsLFPAK33 Trench 9 Automotive MOSFETs Nexperia LFPAK33 Trench 9 Automotive MOSFETs are a portfolio of low RDS(on) 40V AEC-Q101 MOSFETs for modules in demanding powertrain applications. The devices are housed in the miniature, LFPAK33 package with a footprint of only 10.9mm². The LFPAK33 MOSFETs use Nexperia's Trench 9 technology. This results in a 48% reduction in RDS(on) when compared to previous devices. These devices cover a range of applications from 30W up to 300W. BUK7M3R3-40H and BUK9M3R3-40H (Standard Level and Logic Level) devices feature a 3.3mΩ RDS(on).
Brand | Nexperia |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 1500 |
Id - Continuous Drain Current | 85 A |
Manufacturer | Nexperia |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package/Case | LFPAK-33-5 |
Part # Aliases | 934660783115 |
Pd - Power Dissipation | 83 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 22 nC |
Rds On - Drain-Source Resistance | 5 mOhms |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |