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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
BUK7M6R0-40HX, BUK7M6R0-40H/ SOT1210/mLFPAK
Semiconductors\Discrete SemiconductorsLFPAK33 Trench 9 Automotive MOSFETs
Nexperia LFPAK33 Trench 9 Automotive MOSFETs are a portfolio of low R DS(on) 40V AEC-Q101 MOSFETs for modules in demanding powertrain applications. The devices are housed in the miniature, LFPAK33 package with a footprint of only 10.9mm². The LFPAK33 MOSFETs use Nexperia's Trench 9 technology. This results in a 48% reduction in R DS(on) when compared to previous devices. These devices cover a range of applications from 30W up to 300W. BUK7M3R3-40H and BUK9M3R3-40H (Standard Level and Logic Level) devices feature a 3.3mΩ R DS(on).
Brand | Nexperia |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity: Factory Pack Quantity | 1500 |
Fall Time | 6.6 ns |
Id - Continuous Drain Current | 50 A |
Manufacturer | Nexperia |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | LFPAK-33-8 |
Packaging | Reel |
Part # Aliases | 934660784115 |
Pd - Power Dissipation | 70 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 28 nC |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 6 mOhms |
Rise Time | 6.4 ns |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 14 ns |
Typical Turn-On Delay Time | 7.7 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 2.4 V |