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BUK9Y3R0-40E,115

Semiconductors\Discrete SemiconductorsBUKx Automotive MOSFETs Nexperia BUKx Automotive MOSFETs offer logic level N-channel MOSFETs featuring TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high-performance automotive applications.

Brand	Nexperia
Channel Mode	Enhancement
Factory Pack Quantity	1500
Id - Continuous Drain Current	100 A
Manufacturer	Nexperia
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-669-5
Part # Aliases	934067043115
Pd - Power Dissipation	194 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	35.5 nC
Rds On - Drain-Source Resistance	2.47 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-15 V, +15 V
Vgs th - Gate-Source Threshold Voltage	1.7 V
Current - Continuous Drain (Id) @ 25°C	100A(Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35.5 nC @ 5 V
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5962 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C(TJ)
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	194W(Tc)
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.5mOhm @ 25A, 10V
Supplier Device Package	LFPAK56, Power-SO8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	2.1V @ 1mA