Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

BUK9Y59-60E,115, MOSFET BUK9Y59-60E/SOT669/LFPAK

Semiconductors\Discrete Semiconductors The BUK9Y59-60E is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175°C rating • True logic level gate with VGS (th) rating of greater than 0.5V at 175°C • -55 to 175°C Junction temperature range

Channel Type	N Channel
Drain Source On State Resistance	0.044Ом
Power Dissipation	37Вт
Количество Выводов	4вывод(-ов)
Максимальная Рабочая Температура	175 C
Монтаж транзистора	Surface Mount
Напряжение Измерения Rds(on)	10В
Напряжение Истока-стока Vds	60В
Непрерывный Ток Стока	16.7А
Полярность Транзистора	N Канал
Пороговое Напряжение Vgs	1.7В
Рассеиваемая Мощность	37Вт
Сопротивление во Включенном Состоянии Rds(on)	0.044Ом
Стиль Корпуса Транзистора	SOT-669
Уровень Чувствительности к Влажности (MSL)	MSL 1-Безлимитный
Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Maximum Continuous Drain Current	16.7 A
Maximum Drain Source Resistance	133 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	10 V
Maximum Gate Threshold Voltage	2.45V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	37 W
Minimum Gate Threshold Voltage	0.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	LFPAK, SOT-669
Pin Count	4
Series	BUK9Y59
Transistor Configuration	Single
Typical Gate Charge @ Vgs	6.1 nC @ 5 V
Width	4.1mm
Brand	Nexperia
Factory Pack Quantity: Factory Pack Quantity	1500
Id - Continuous Drain Current	16.7 A
Manufacturer	Nexperia
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-669-5
Part # Aliases	934067025115
Pd - Power Dissipation	37 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	6.1 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	51 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage	1.7 V