Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
BUK9Y6R5-40HX, BUK9Y6R5-40H/SOT669/LFPAK
Semiconductors\Discrete SemiconductorsTrench 9 Superjunction MOSFETs Nexperia Trench 9 Superjunction MOSFETs combine low voltage superjunction technology with advanced packaging design to deliver high performance and ruggedness. Trench 9 MOSFETs are all qualified to AEC-Q101, and exceed the requirements of this international automotive standard by as much as two times on key reliability tests, including Temperature Cycling (TC), High-Temperature Gate Bias (HTGB), High-Temperature Reverse Bias (HTRB), and Intermittent Operating Life (IOL).
Brand | Nexperia |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 1500 |
Fall Time | 6.3 ns |
Id - Continuous Drain Current | 70 A |
Manufacturer | Nexperia |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-669-5 |
Part # Aliases | 934661533115 |
Pd - Power Dissipation | 64 W |
Product Category | MOSFETs |
Product Type | MOSFETs |
Qg - Gate Charge | 21 nC |
Rds On - Drain-Source Resistance | 6.5 mOhms |
Rise Time | 12 ns |
Subcategory | Transistors |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 10 ns |
Typical Turn-On Delay Time | 10 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 2.15 V |