Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BUK9Y7R6-40E,115, MOSFET BUK9Y7R6-40E/SOT669/LFPAK
Semiconductors\Discrete SemiconductorsN-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56, Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.
| Automotive Standard | AEC-Q101 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 79 A |
| Maximum Drain Source Resistance | 15.28 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | 15 V |
| Maximum Gate Threshold Voltage | 2.45V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 95 W |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | LFPAK56 |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 5.5 nC @ 10 V |
| Width | 4.1mm |
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