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CMPA0060025F, RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 25 Watt

RF & Wireless\RF Integrated Circuits\RF AmplifierGaN HEMT-Based MMIC Power Amplifiers MACOM Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)-Based Monolithic Microwave Integrated Circuit (MMIC) Power Amplifiers are optimized for high-power applications, such as ultra-broadband amplifiers, satellite uplinks, and test instrumentation. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. The GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. These MACOM MMIC power amplifiers enable wide bandwidths to be achieved in a small footprint.

Bandwidth	20 MHz to 6000 MHz
Brand	MACOM
Factory Pack Quantity	10
Gain	17 dB
Manufacturer	MACOM
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Mounting Style	Screw
Number of Channels	1 Channel
OIP3 - Third Order Intercept	32 dBm
Operating Frequency	20 MHz to 6 GHz
Operating Supply Current	500 mA
Operating Supply Voltage	50 V
Packaging	Tray
Pd - Power Dissipation	25 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Product	GaN
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN SiC
Test Frequency	6 GHz
Type	Power Amplifiers
Factory Pack Quantity: Factory Pack Quantity	1
Package / Case	0.5 in x 0.5 in
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