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CMPA0060025F, RF Amplifier IC 20MHz ~ 6GHz 780019

RF and Wireless\RF AmplifiersGaN HEMT-Based MMIC Power Amplifiers Wolfspeed GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) Based MMIC (Monolithic Microwave Integrated Circuit) Power Amplifiers are optimized for high-power applications, such as ultra-broadband amplifiers, satellite uplinks, and test instrumentation. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. These MMIC Power Amplifiers enable very wide bandwidths to be achieved in a small footprint.

Bandwidth	20 MHz to 6000 MHz
Brand	Wolfspeed
Factory Pack Quantity: Factory Pack Quantity	1
Gain	17 dB
Manufacturer	Wolfspeed
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Mounting Style	Screw
Number of Channels	1 Channel
OIP3 - Third Order Intercept	32 dBm
Operating Frequency	20 MHz to 6 GHz
Operating Supply Current	500 mA
Operating Supply Voltage	50 V
Package / Case	0.5 in x 0.5 in
Packaging	Tray
Pd - Power Dissipation	25 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Product	GaN
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN SiC
Test Frequency	6 GHz
Type	Power Amplifiers
Factory Pack Quantity	10