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CMPA2735030S, RF Amplifier MMIC, GaN HEMT, G50V3-1C, 30W, 2.7-3.5GH

RF & Wireless\RF Integrated Circuits\RF AmplifierCMPA2735030S 30W GaN MMIC Power Amplifier MACOM CMPA2735030S 30W 2.7GHz to 3.5GHz GaN MMIC Power Amplifier is a High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The CMPA2735030S gallium nitride (GaN) Amp offers excellent benefits compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Additionally, the GaN HEMTs provide greater power density and wider bandwidths compared to Si and GaAs transistors.

Brand	MACOM
Factory Pack Quantity	50
Gain	28.1 dB
Manufacturer	MACOM
Maximum Operating Temperature	+225 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Operating Frequency	2.7 GHz to 3.5 GHz
Package / Case	QFN-32
Packaging	Reel, Cut Tape
Pd - Power Dissipation	32 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN