Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

CMPA5259050S, RF Amplifier MMIC, GaN HEMT, G28V5, 50W, 5.2-5.9GHz,

RF & Wireless\RF Integrated Circuits\RF AmplifierCMPA5259050S GaN MMIC Power Amplifier MACOM CMPA5259050S GaN MMIC Power Amplifier includes a two-stage reactively matched amplifier design approach enabling high power and power-added efficiency. The gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) features 27dB small-signal gain, 65W typical PSAT, and up to 28V operation. The MACOM CMPA5259050S GaN MMIC Power Amplifier is housed in a 5mm x 5mm surface mount (QFN package) and is ideal for civil and military pulsed radar amplifier applications.

Brand	MACOM
Factory Pack Quantity	50
Gain	27.1 dB
Manufacturer	MACOM
Maximum Operating Temperature	+225 C
Minimum Operating Temperature	-65 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Operating Frequency	5 GHz to 5.9 GHz
Operating Supply Current	18.96 mA
Operating Supply Voltage	28 V
Package/Case	QFN-32
Packaging	Reel, Cut Tape
Product Category	RF Amplifier
Product Type	RF Amplifier
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN
Type	Power Amplifiers