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CMPA601C025F, RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt

RF & Wireless\RF Integrated Circuits\RF AmplifierGaN HEMT-Based MMIC Power Amplifiers Wolfspeed GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) Based MMIC (Monolithic Microwave Integrated Circuit) Power Amplifiers are optimized for high-power applications, such as ultra-broadband amplifiers, satellite uplinks, and test instrumentation. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. These MMIC Power Amplifiers enable very wide bandwidths to be achieved in a small footprint.

Brand	Wolfspeed
Factory Pack Quantity: Factory Pack Quantity	1
Gain	34 dB
Input Return Loss	-5 dB
Manufacturer	Wolfspeed
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Mounting Style	Screw
Number of Channels	1 Channel
OIP3 - Third Order Intercept	22 dBm
Operating Frequency	6 GHz to 12 GHz
Operating Supply Current	2 A
Operating Supply Voltage	28 V
P1dB - Compression Point	46.2 dBm
Packaging	Tray
Pd - Power Dissipation	35 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN
Test Frequency	12 GHz
Type	Power Amplifiers
Вес, г	12.65