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CSD17552Q5A, МОП-транзистор, N-канал, 30-V NexFET Pwr, [VSONP-8]

NexFET™ Power MOSFETs Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	3.6 ns
Forward Transconductance - Min	77 S
Id - Continuous Drain Current	60 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	VSONP-8
Pd - Power Dissipation	3 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	9 nC
Rds On - Drain-Source Resistance	7.5 mOhms
REACH - SVHC	Details
Rise Time	11.4 ns
Series	CSD17552Q5A
Subcategory	MOSFETs
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	12.2 ns
Typical Turn-On Delay Time	7.6 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Вес, г	0.1