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CSD19537Q3

CSD19537Q3 N-Channel NexFET™ Power MOSFETs Texas Instruments CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control. Learn More

Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	3 ns
Id - Continuous Drain Current	50 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSON-CLIP-8
Pd - Power Dissipation	83 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	16 nC
Rds On - Drain-Source Resistance	14.5 mOhms
Rise Time	3 ns
Series	CSD19537Q3
Subcategory	MOSFETs
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	5 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.6 V
Вес, г	0.02