Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
DF2S14P2FU,H3F
Next-Generation ESD Protection Diodes Toshiba Next-Generation ESD Protection Diodes are used for power supply circuits in mobile devices such as smartphones and wearable devices. A choice of operating voltages (3.6V, 5.5V, 12.6V) and packages (SOD962, SL2, SOD963, CST2C, SOT553, USC, and DFN10) provides flexible options for realizing ESD protection against static electricity and noise in various designs.
Brand | Toshiba |
Breakdown Voltage | 12.9 V |
Cd - Diode Capacitance | 270 pF |
Clamping Voltage | 32 V |
Factory Pack Quantity | 3000 |
Ipp - Peak Pulse Current | 50 A |
Manufacturer | Toshiba |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Number of Channels | 1 Channel |
Package/Case | USC-2 |
Polarity | Unidirectional |
Pppm - Peak Pulse Power Dissipation | 1.6 kW |
Product Category | ESD Protection Diodes/TVS Diodes |
Product Type | ESD Suppressors |
Subcategory | TVS Diodes/ESD Suppression Diodes |
Termination Style | SMD/SMT |
Vesd - Voltage ESD Air Gap | 30 kV |
Vesd - Voltage ESD Contact | 30 kV |
Working Voltage | 12.6 V |