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DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole
Semiconductors\Discrete Semiconductors\IGBTsThe DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat), excellent quality and high-switching performance.
| Gate Capacitance | 3942pF |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 50 A, 100(Pulsed)A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 348 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
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