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![DMC3021LSD-13, MOSFET транзистор 30V 8.5A/7A [SOIC-8_150mil]](/images/placeholder.jpg)
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DMC3021LSD-13, MOSFET транзистор 30V 8.5A/7A [SOIC-8_150mil]
DMx Enhancement Mode MOSFETs
Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.
Brand | Diodes Incorporated |
Channel Mode | Enhancement |
Configuration | Dual |
Factory Pack Quantity | 2500 |
Fall Time | 8.55 ns, 22.2 ns |
Id - Continuous Drain Current | 8.5 A, 7 A |
Manufacturer | Diodes Incorporated |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 2 Channel |
Package / Case | SOIC-8 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 2.5 W |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 7.8 nC, 21.1 nC |
Rds On - Drain-Source Resistance | 21 mOhms, 39 mOhms |
Rise Time | 4.5 ns, 6.5 ns |
Series | DMC3021 |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel, P-Channel |
Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 26.3 ns, 50.1 ns |
Typical Turn-On Delay Time | 5 ns, 10.1 ns |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 1 V |
Вес, г | 0.07 |