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DMG1029SV-7, Транзистор N/P-МОП, полевой, -60/60В, -480/-320мА, 660мВт

Power MOSFETs Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Automotive	No
Channel Mode	Enhancement
Channel Type	N\|P
Configuration	Dual
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Flat
Maximum Continuous Drain Current (A)	0.5@N Channel\|0.36@P Channel
Maximum Diode Forward Voltage (V)	1.4
Maximum Drain Source Resistance (mOhm)	1700@10V@N Channel\|4000@10V@P Channel
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Leakage Current (nA)	50
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Maximum IDSS (uA)	0.01
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	1000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	NRND
PCB changed	6
Pin Count	6
PPAP	No
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-563
Supplier Temperature Grade	Automotive
Typical Fall Time (ns)	11.6
Typical Gate Charge @ Vgs (nC)	0.28@4.5V
Typical Input Capacitance @ Vds (pF)	25@25V
Typical Rise Time (ns)	7.9
Typical Turn-Off Delay Time (ns)	10.6
Typical Turn-On Delay Time (ns)	5.5
Вес, г	0.01