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DMN3009SK3-13, Транзистор

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Brand	Diodes Incorporated
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	15 ns
Id - Continuous Drain Current	80 A
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Pd - Power Dissipation	44 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	42 nC
Rds On - Drain-Source Resistance	5.5 mOhms
Rise Time	4.1 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	31 ns
Typical Turn-On Delay Time	3.9 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Вес, г	0.52