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DMN6040SSS-13

Power MOSFETs Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Brand	Diodes Incorporated
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	4 ns
Id - Continuous Drain Current	5.5 A
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOIC-8
Pd - Power Dissipation	2 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	22.4 nC
Rds On - Drain-Source Resistance	40 mOhms
Rise Time	8.1 ns
Series	DMN60
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20.1 ns
Typical Turn-On Delay Time	6.6 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Вес, г	0.39