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DTC114EMT2L, NPN 50V 50MA
Semiconductors\Discrete Semiconductors Описание Транзистор: NPN Характеристики
Категория
Транзистор
Тип
биполярный
Вид
NPN
| Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
| Collector Current (Ic) | 50mA |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@500uA, 10mA |
| DC Current Gain (hFE@Ic,Vce) | 30@5mA, 5V |
| Power Dissipation (Pd) | 150mW |
| Transistor Type | 1 NPN-Pre Biased |
| Transition Frequency (fT) | 250MHz |
| Base-Emitter Resistor | 47kΩ |
| Maximum Collector Emitter Voltage | 50 V |
| Maximum DC Collector Current | 100 mA |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 mW |
| Minimum DC Current Gain | 30 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SC-105AA |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Input Resistor | 47 kΩ |
| Typical Resistor Ratio | 1 |
| Brand | ROHM Semiconductor |
| Configuration | Single |
| Continuous Collector Current | 50 mA |
| DC Collector/Base Gain hfe Min | 30 |
| Factory Pack Quantity | 8000 |
| Height | 0.5 mm |
| Length | 1.2 mm |
| Manufacturer | ROHM Semiconductor |
| Mounting Style | SMD/SMT |
| Package / Case | VMT-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 150 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| RoHS | Details |
| Series | DTC114EMT |
| Transistor Polarity | NPN |
| Width | 0.8 mm |
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