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EM6K34T2CR, 0.9V Drive Nch MOSFET

Semiconductors\Discrete SemiconductorsMOSFET, DUAL N-CH, 50V, SOT-563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:150mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:-; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Brand	ROHM Semiconductor
Channel Mode	Enhancement
Configuration	2 N-Channel
Factory Pack Quantity	8000
Fall Time	43 ns, 43 ns
Height	0.5 mm
Id - Continuous Drain Current	200 mA, 200 mA
Length	1.6 mm
Manufacturer	ROHM Semiconductor
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOT-563-6
Packaging	Reel
Pd - Power Dissipation	150 mW
Product Category	MOSFET
Rds On - Drain-Source Resistance	1.6 Ohms, 1.6 Ohms
Rise Time	8 ns, 8 ns
RoHS	Details
Series	EM6K34
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-channel
Typical Turn-Off Delay Time	17 ns, 17 ns
Typical Turn-On Delay Time	5 ns, 5 ns
Unit Weight	0.000289 oz
Vds - Drain-Source Breakdown Voltage	50 V, 50 V
Vgs - Gate-Source Voltage	8 V, 8 V
Vgs th - Gate-Source Threshold Voltage	300 mV, 300 mV
Width	1.2 mm
Continuous Drain Current (Id)	200mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	2.2Ω@200mA, 4.5V
Drain Source Voltage (Vdss)	50V
Gate Threshold Voltage (Vgs(th)@Id)	800mV@1mA
Input Capacitance (Ciss@Vds)	26pF@10V
Power Dissipation (Pd)	120mW
Type	2 N-Channel
Configuration	Dual
Fall Time	43 ns
Id - Continuous Drain Current	200 mA
Minimum Operating Temperature	-55 C
Package/Case	SOT-563-6
Part # Aliases	EM6K34
Product Type	MOSFET
Rds On - Drain-Source Resistance	2.2 Ohms
Rise Time	8 ns
Subcategory	MOSFETs
Transistor Type	2 N-Channel MOSFET
Typical Turn-Off Delay Time	17 ns
Typical Turn-On Delay Time	5 ns
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	1 V