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Цена по запросу
F3L225R12W3H3B11BPSA1, IGBT Modules EASY STANDARD PLUS
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.55 V |
| Configuration | Half Bridge |
| Continuous Collector Current at 25 C | 175 A |
| Factory Pack Quantity: Factory Pack Quantity | 8 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Package / Case | EasyPACK |
| Packaging | Tray |
| Part # Aliases | F3L225R12W3H3_B11 SP005675779 |
| Pd - Power Dissipation | 20 mW |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | Si |
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