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F475R06W1E3BOMA1, Trans IGBT Module N-CH 600V 100A 275W 15-Pin EASY1B-1 Tray

Diodes, Transistors and Thyristors\IGBT Transistors\IGBT ModuleМодуль Trans IGBT N-CH 600 В 100 А 275000 мВт 15-контактный лоток EASY1B-1

Automotive	No
Channel Type	N
Configuration	Quad
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Collector-Emitter Voltage (V)	600
Maximum Continuous Collector Current (A)	100
Maximum Gate Emitter Leakage Current (uA)	0.4
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	275000
Minimum Operating Temperature (°C)	-40
Mounting	Screw
Packaging	Tray
Part Status	Active
PCB changed	15
Pin Count	15
PPAP	No
Supplier Package	EASY1B-1
Typical Collector Emitter Saturation Voltage (V)	1.45
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	100 A
Maximum Gate Emitter Voltage	+/-20V
Maximum Power Dissipation	275 W
Number of Transistors	4