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По сертификату
"военный регистр"
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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FB30R06W1E3, IGBT Modules IGBT-MODULE
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 2 V |
| Configuration | 3-Phase Inverter |
| Continuous Collector Current at 25 C | 39 A |
| Factory Pack Quantity | 24 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Package / Case | EASY1B |
| Packaging | Tray |
| Part # Aliases | SP000307549 FB30R06W1E3BOMA1 |
| Pd - Power Dissipation | 115 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Modules |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 24 |
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