Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
![FDB050AN06A0, Транзистор N-MOSFET 60В 18A/80A [D2-PAK]](/images/placeholder.jpg)
Цена по запросу
FDB050AN06A0, Транзистор N-MOSFET 60В 18A/80A [D2-PAK]
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 11 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 245 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Width | 9.65mm |
| Вес, г | 2.5 |
