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FDB33N25TM, Транзистор [D2-PAK]

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Resistance	94 mΩ
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	235 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	UniFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	36.8 nC @ 10 V
Width	11.33mm
Вес, г	0.3