Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FDD3N40TM, Транзистор
Описание Транзистор: N-MOSFET, полевой, 400В, 1,25А, 30Вт, DPAK Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 25 ns |
| Forward Transconductance - Min | 2 S |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 2 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 30 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 2.8 Ohms |
| Rise Time | 30 ns |
| RoHS | Details |
| Series | FDD3N40 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.009184 oz |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 6.22 mm |
| Вес, г | 0.26 |
