Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FF100R12KS4HOSA1, IGBT Module, Dual, 150 A, 3.2 V, 780 W, 125 °C, Module
Semiconductors - Discretes\IGBTs\IGBT Modules
| Collector Emitter Saturation Voltage | 3.2V |
| Collector Emitter Saturation Voltage Vce(on) | 3.2V |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Continuous Collector Current | 150A |
| DC Collector Current | 150A |
| IGBT Configuration | Dual |
| IGBT Technology | IGBT 2 Fast |
| IGBT Termination | Stud |
| Junction Temperature Tj Max | 125°C |
| Operating Temperature Max | 125°C |
| Power Dissipation | 780W |
| Power Dissipation Pd | 780W |
| Product Range | 62mm C |
| Transistor Case Style | Module |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Вес, г | 0.34 |
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