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FF200R12KE3, IGBT Modules 1200V 200A DUAL

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesМодули биполярных транзисторов с изолированным затвором (IGBT) 1200V 200A DUAL

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1200 V
Collector-Emitter Saturation Voltage	1.7 V
Configuration	Dual
Continuous Collector Current at 25 C	295 A
Factory Pack Quantity: Factory Pack Quantity	10
Gate-Emitter Leakage Current	400 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+125 C
Minimum Operating Temperature	-40 C
Mounting Style	Chassis Mount
Package/Case	IS5a(62 mm)-7
Packaging	Tray
Part # Aliases	SP000100735 FF200R12KE3HOSA1
Pd - Power Dissipation	1050 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Series	Trenchstop IGBT3-E3
Subcategory	IGBTs
Tradename	TRENCHSTOP
Base Product Number	FF200R12 ->
Configuration	2 Independent
Current - Collector Cutoff (Max)	5mA
ECCN	EAR99
HTSUS	8541.29.0095
Input	Standard
Input Capacitance (Cies) @ Vce	14nF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Chassis Mount
NTC Thermistor	Yes
Operating Temperature	-40В°C ~ 125В°C
Package	Bulk
Package / Case	Module
Power - Max	1050W
REACH Status	REACH Unaffected
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max)	1200V
Channel Type	N
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	295 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+125 °C
Maximum Power Dissipation	1050 W
Minimum Operating Temperature	-40 °C
Package Type	62MM Module
Pin Count	7
Switching Speed	1MHz
Transistor Configuration	Series
Вес, г	340