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FF200R17KE4HOSA1, IGBT Modules 1700 V, 200 A dual IGBT module

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesThe Infineon dual IGBT module with fast IGBT4 and emitter controlled 4 diode. Optimal electrical performance

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1700 V
Collector-Emitter Saturation Voltage	2.3 V
Configuration	Dual
Continuous Collector Current at 25 C	310 A
Factory Pack Quantity: Factory Pack Quantity	10
Gate-Emitter Leakage Current	100 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Mounting Style	Chassis Mount
Package / Case	Module
Packaging	Tray
Part # Aliases	FF200R17KE4 SP000713374
Pd - Power Dissipation	1250 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Series	FFXR17K4H
Subcategory	IGBTs
Technology	Trench/Field Stop
Channel Type	N
Configuration	Common Emitter
Maximum Collector Emitter Voltage	1700 V
Maximum Continuous Collector Current	200 A
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	1250 W
Mounting Type	Panel Mount
Number of Transistors	1
Package Type	62MMHB
Pin Count	7