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Цена по запросу
FF300R12KS4, Диодно-тиристорный модуль
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 3.2 V |
| Configuration | Dual |
| Continuous Collector Current at 25 C | 370 A |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Package / Case | 62 mm |
| Packaging | Tray |
| Part # Aliases | SP000100774 FF300R12KS4HOSA1 |
| Pd - Power Dissipation | 1.95 kW |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Series | IGBT2 Fast |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 353 |
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