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FF300R12KS4, IGBT Modules ELECTRONIC COMPONENT
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FF300R12KS4, IGBT Modules ELECTRONIC COMPONENT

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Brand Infineon Technologies
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 3.2 V
Configuration Dual
Continuous Collector Current at 25 C 370 A
Factory Pack Quantity: Factory Pack Quantity 10
Gate-Emitter Leakage Current 400 nA
Manufacturer Infineon
Maximum Gate Emitter Voltage 20 V
Maximum Operating Temperature +125 C
Minimum Operating Temperature -40 C
Mounting Style Chassis Mount
Package / Case 62 mm
Packaging Tray
Part # Aliases SP000100774 FF300R12KS4HOSA1
Pd - Power Dissipation 1.95 kW
Product Category IGBT Modules
Product Type IGBT Modules
Product IGBT Silicon Modules
Series IGBT2 Fast
Subcategory IGBTs
Technology Si
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