Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FF300R12KS4HOSA1, БТИЗ массив и модульный транзистор, N Канал, 370 А, 3.2 В, 1.95 кВт, 1.2 кВ, Module
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.
| Channel Type | N |
| Configuration | Series |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 370 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +125 °C |
| Maximum Power Dissipation | 1950 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Panel Mount |
| Package Type | 62MM Module |
| Pin Count | 3 |
| Transistor Configuration | Series |
| Вес, г | 366 |
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