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FF300R12ME4, IGBT Modules IGBT 1200V 300A

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesEconoDUAL™ 3 IGBT Modules Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.75 V
Configuration	Dual
Continuous Collector Current at 25 C	450 A
Factory Pack Quantity	10
Gate-Emitter Leakage Current	400 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+125 C
Minimum Operating Temperature	-40 C
Mounting Style	Chassis Mount
Packaging	Tray
Part # Aliases	SP000405060 FF300R12ME4BOSA1
Pd - Power Dissipation	1.6 kW
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Subcategory	IGBTs
Technology	Si
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