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FF400R12KE3, IGBT Modules 1200V 400A DUAL HALF BRIDGE

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.7 V
Configuration	Dual
Continuous Collector Current at 25 C	580 A
Factory Pack Quantity: Factory Pack Quantity	10
Gate-Emitter Leakage Current	400 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+125 C
Minimum Operating Temperature	-40 C
Mounting Style	Chassis Mount
Package / Case	62 mm
Packaging	Tray
Part # Aliases	SP000100781 FF400R12KE3HOSA1
Pd - Power Dissipation	2000 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Series	IGBT3-E3
Subcategory	IGBTs
Technology	Si
Вес, г	366