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По сертификату
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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FF400R12KE3, IGBT Modules 1200V 400A DUAL HALF BRIDGE
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Configuration | Dual |
| Continuous Collector Current at 25 C | 580 A |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Package / Case | 62 mm |
| Packaging | Tray |
| Part # Aliases | SP000100781 FF400R12KE3HOSA1 |
| Pd - Power Dissipation | 2000 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Series | IGBT3-E3 |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 366 |
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