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По сертификату
"военный регистр"
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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FF450R12KT4, IGBT Modules N-CH 1.2KV 580A
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Configuration | Dual |
| Continuous Collector Current at 25 C | 580 A |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Package/Case | 62 mm |
| Packaging | Tray |
| Part # Aliases | SP000370613 FF450R12KT4HOSA1 |
| Pd - Power Dissipation | 2400 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Series | Trenchstop IGBT4-T4 |
| Subcategory | IGBTs |
| Technology | Si |
| Tradename | TRENCHSTOP |
| Вес, г | 340 |
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