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FF450R12KT4HOSA1, Биполярный транзистор IGBT, 1200В, 450А

Транзисторы / IGBT (БТИЗ) транзисторы / Силовые модули IGBTБиполярный транзистор IGBT, 1200В, 450А

Корпус	AG-62MMHB
Automotive	Unknown
Channel Type	N
Configuration	Dual
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	1200
Maximum Continuous Collector Current (A)	580
Maximum Gate Emitter Leakage Current (uA)	0.4
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2400
Minimum Operating Temperature (°C)	-40
Mounting	Screw
Packaging	Tray
Part Status	Active
PCB changed	7
Pin Count	7
PPAP	Unknown
Supplier Package	62MM-1
Typical Collector Emitter Saturation Voltage (V)	1.75
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	580 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.4 kW
Minimum Operating Temperature	-40 °C
Mounting Type	Panel Mount
Package Type	62MM Module
Transistor Configuration	Series
Вес, г	365