Цена по запросу
FF50R12RT4HOSA1
ЭлектроэлементIGBT, MODULE, N-CH, 1.2KV, 50A, Transistor Polarity:N Channel, DC Collector Current:50A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:285W, Collector Emitter Voltage V(br)ceo:1.2kV, Transistor Case , RoHS Compliant: Yes
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Cutoff (Max) | 1mA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 2.8nF @ 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Chassis Mount |
| NTC Thermistor | No |
| Operating Temperature | -40В°C ~ 150В°C(TJ) |
| Package / Case | Module |
| Part Status | Active |
| Power - Max | 285W |
| Series | - |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(on) | 1.85V |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Continuous Collector Current | 50A |
| DC Collector Current | 50A |
| IGBT Configuration | Dual(Half Bridge) |
| IGBT Technology | IGBT 4(Trench/Field Stop) |
| IGBT Termination | Stud |
| Junction Temperature Tj Max | 150°C |
| Operating Temperature Max | 150°C |
| Power Dissipation | 285W |
| Power Dissipation Pd | 285W |
| Transistor Case Style | Module |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Вес, г | 154.5 |
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