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FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Semiconductors\Discrete Semiconductors\IGBTsThe Infineon dual fast trench IGBT module with TRENCHSTOP IGBT4 and Emitter Controlled 4 diode. Highest power density
| Channel Type | N |
| Configuration | Dual |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 600 A |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 2 |
| Package Type | AG-62MM |
| Transistor Configuration | Series |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.75 V |
| Continuous Collector Current at 25 C | 600 A |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis |
| Packaging | Tray |
| Part # Aliases | FF600R12KT4 SP005342974 |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | Si |
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