Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FF800R12KE7EHPSA1, IGBT Modules 1200 V, 800 A common emitter IGBT module
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.75 V |
| Configuration | Dual |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Packaging | Tray |
| Part # Aliases | FF800R12KE7_E SP005568685 |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | IGBT7-E7 |
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