Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FF800R12KE7HPSA1, IGBT Modules MEDIUM POWER 62MM
Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesTrans IGBT Module N-CH 1200V 800A 7-Pin Tray
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.75 V |
| Configuration | Dual |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Packaging | Tray |
| Part # Aliases | FF800R12KE7 SP005432766 |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Series | FFXR12KX7H |
| Subcategory | IGBTs |
| Technology | IGBT7-E7 |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 800 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Part Status | Active |
| PCB changed | 7 |
| Pin Count | 7 |
| PPAP | No |
| Typical Collector Emitter Saturation Voltage (V) | 1.5 |
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