Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
FP100R12N2T7BPSA2, IGBT Modules LOW POWER ECONO
Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesThe Infineon three phase PIM IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
Channel Type | N |
Configuration | Common Emitter |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 100 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 20 mW |
Mounting Type | Panel Mount |
Number of Transistors | 7 |
Pin Count | 31 |