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FP10R06W1E3, IGBT Modules N-CH 600V 16A

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.55 V
Configuration	3-Phase Inverter
Continuous Collector Current at 25 C	16 A
Factory Pack Quantity: Factory Pack Quantity	24
Gate-Emitter Leakage Current	400 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Mounting Style	Chassis Mount
Package / Case	EASY1B
Packaging	Tray
Part # Aliases	SP000092044 FP10R06W1E3BOMA1
Pd - Power Dissipation	68 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Series	Trench/Fieldstop IGBT3-E3
Subcategory	IGBTs
Technology	Si
Tradename	EasyPIM
Вес, г	24