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Цена по запросу
FP15R12W1T4, IGBT Modules IGBT-MODULE
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Brand | Infineon Technologies |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 1.85 V |
Configuration | 3-Phase Inverter |
Continuous Collector Current at 25 C | 28 A |
Factory Pack Quantity: Factory Pack Quantity | 24 |
Gate-Emitter Leakage Current | 400 nA |
Manufacturer | Infineon |
Maximum Gate Emitter Voltage | 20 V |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Chassis Mount |
Package / Case | EASY1B |
Packaging | Tray |
Part # Aliases | SP000364071 FP15R12W1T4BOMA1 |
Pd - Power Dissipation | 130 W |
Product Category | IGBT Modules |
Product Type | IGBT Modules |
Product | IGBT Silicon Modules |
Series | Trenchstop IGBT4-T4 |
Subcategory | IGBTs |
Technology | Si |
Tradename | EasyPIM |
Вес, г | 24 |