Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

FP25R12W2T4, IGBT Modules N-CH 1.2KV 39A

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules The FP25R12W2T4 is an EasyPIM™ 2B PIM IGBT Module with fast Trench/field-stop IGBT4, emitter controlled 4 diode and NTC. • High power density • Established easy module concept • Integrated temperature sensor available • Low stray inductance module design • Compact module concept • Configuration flexibility

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.85 V
Configuration	3-Phase Inverter
Continuous Collector Current at 25 C	39 A
Factory Pack Quantity	15
Gate-Emitter Leakage Current	400 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Mounting Style	Chassis Mount
Package/Case	EASY2B
Packaging	Tray
Part # Aliases	SP000307561 FP25R12W2T4BOMA1
Pd - Power Dissipation	175 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Subcategory	IGBTs
Technology	Si
Collector Emitter Saturation Voltage	1.85V
Collector Emitter Saturation Voltage Vce(on)	1.85V
Collector Emitter Voltage Max	1.2kV
Collector Emitter Voltage V(br)ceo	1.2kV
Continuous Collector Current	25A
DC Collector Current	25A
IGBT Configuration	PIM
IGBT Technology	IGBT 4
IGBT Termination	Press Fit
Junction Temperature Tj Max	150°C
No. of Pins	23Pins
Operating Temperature Max	150°C
Power Dissipation	175W
Power Dissipation Pd	175W
Transistor Case Style	Module
Transistor Mounting	Panel
Transistor Polarity	N Channel
Вес, г	39