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Цена по запросу
FP25R12W2T4PB11BPSA1, IGBT Modules 1200 V, 25 A PIM IGBT module
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Configuration | 3-Phase Inverter |
| Continuous Collector Current at 25 C | 25 A |
| Factory Pack Quantity | 18 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Packaging | Tray |
| Part # Aliases | FP25R12W2T4P_B11 SP001326036 |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Вес, г | 39 |
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